Texas Instruments Incorporated introduced a low-side gate driver for use with MOSFETs and Gallium-Nitride (GaN) power field-effect transistors (FETs) in high-density power converters. The new LM5114 ...

Texas Instruments (TI) has claimed the first automotive gallium nitride (GaN) field-effect transistors (FETs) with integrated driver, protection, and active power management for automotive and ...

DALLAS, Nov. 9, 2020 /PRNewswire/ -- Texas Instruments (TI) (Nasdaq: TXN) today expanded its high-voltage power management portfolio with the next generation of 650-V and 600-V gallium nitride (GaN) ...

TOKYO--(BUSINESS WIRE)--Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today announced the space industry’s first radiation-hardened, low side ...

Wide-bandgap semiconductors are an attractive material for power devices due to low losses, improved temperature capability, and high thermal conductivity. Compared to silicon (Si), with a larger ...

MILIPITAS, Calif.--(BUSINESS WIRE)--Teledyne e2v is launching a complete GaN power solution based on technology from pSemi (formerly Peregrine Semiconductor) and GaN Systems. The solution features GaN ...

Chip makers continue to get ready for Gallium-Nitride semiconductors and the higher efficiencies they can bring. Among the latest devices targeting GaN is a low-side gate driver for use with MOSFETs ...

Texas Instruments has introduced a low side gate driver for use with mosfets and Gallium Nitride (GaN) power field effect transistors (fets) in high density power converters. The new LM5114 drives GaN ...

Aiming at laser time-of-flight lidar, Efficient Power Conversion (EPC) has introduced an 80V 15A pulse laser driver IC. EPC21701, as it will be known, can produce pulses down to 2ns at up to 50MHz.

According to the company, this will be the sector's first plastic-packaged, radiation-tolerant PWM controller and Gallium Nitride (GaN) FET driver for DC/DC power supplies in small satellites ...