Researchers at The University of Osaka, in collaboration with ULVAC, Inc. and Ritsumeikan University, have developed a new LED structure that generates circularly polarized light from a single chip.

Gallium nitride (GaN) materials have been applied in optoelectronic devices such as light-emitting diodes (LEDs), laser diodes (LDs) 1, and vertical cavity surface emitting lasers (VCSELs) 2, 3.

The application of light-emitting diodes (LEDs) in display and lighting has been a topic of extensive research and development since the past decade 1. Especially, the development of white light LEDs ...