SiC IGBT technology Silicon-based IGBTs have long been a mainstay in traction, industrial, automotive and high-voltage DC systems, typically operating from 900 V to 6.5 kV. Their bipolar conduction ...
Abstract: A type of 3.3-kV/450-A half-bridge insulated-gate bipolar transistor power module combining the silicon (Si) and silicon carbide (SiC) technologies has been developed and reported in this ...
Abstract: Solid-state dc circuit breaker (SSCB) has become a key component for fast fault isolation in high-voltage dc systems. However, their effectiveness often relies on complex series and parallel ...
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